Technical Program

General Program (SBCCI, SBMicro, WCAS, SForum, PATMOS and VARI)


SBMicro Program

Tuesday, September 1st
Tutorials - Room: Fernando Pessoa 1
Tutorial 1
08:40-10:20
Field Effect Transistor: From MOSFET to Tunnel FET
João Antonio Martino
Universidade de São Paulo - USP, Brazil
10:20-10:40 Coffe-Break & Exhibitors
Tutorial 2
10:40-12:20
Revisiting Diode and Solar Cell extraction methods
Adelmo Ortiz-Conde
Universidad Simon Bolivar, Venezuela
12:20-14:00
Lunch
Tutorial 3
14:00-15:40
More , Beyond and More than Moore meeting for 3D
Simon Deleonibus
CEA-Leti, France
15:40-16:00 Coffe-Break & Exhibitors
Tutorial 4
16:00-17:40
Trends and challenges in Nano-electronic technologies for new device concepts
Rita Rooyackers
IMEC, Belgium
Opening - Room: Fernando Pessoa 1 & 2 - 18:00 - 18:20
SBmicro Awards - Room: Fernando Pessoa 1 & 2 - 18:20 - 18:40
Welcome Reception and Cocktail - Room: Foyer S2 & Praça Luiz de Camões - 18:40 - 20:00
Wednesday, September 2nd
Keynotes - Room: Fernando Pessoa 1 & 2
Keynote 1
08:40-09:40
Lessons from Brain Connectivity for Future Interconnect in ICs
Jan Rabaey
University of California at Berkeley - UCB, USA
09:40-10:00 Coffe-Break & Exhibitors
Session 1 - Semiconductor Devices - Room: Fernando Pessoa 1
Chair: Michelly de Souza, FEI
10:00-10:20
Dynamic threshold voltage influence on Ge pMOSFET hysteresis
Alberto Oliveira, Paula Agopian, João Martino, Eddy Simoen, Cor Claeys, Hans Mertens, Nadine Collaert and Aaron Thean
10:20-10:40 Apparent Schottky Barrier Height of MIS Ni/SiC diodes
Ivan Kaufmann, Marcelo Pereira and Henri Boudinov
10:40-11:00 Asymmetric Self-Cascode versus Graded-Channel SOI nMOSFETs for Analog Applications
Rafael Assalti, Marcelo Antonio Pavanello, Denis Flandre and Michelly de Souza
11:00-11:20 Back Enhanced (BE) SOI pMOSFET
Ricardo Rangel and Joao Martino
11:20-11:40 Heightening the Electrical Performance of MOSFET Switches by Applying Ellipsoidal Layout Style
Marcello Marcelino Correia and Salvador P. Gimenez
11:40-12:00 Reliability of film thickness extraction through CV curves of SOI p-i-n gated diodes
Katia Sasaki, Carlos Navarro, Maryline Bawedin, François Andrieu, Joao Martino and Sorin Cristoloveanu
12:00-13:20 Lunch
Invited Papers - Room: Fernando Pessoa 1
Chair: Marcelo Antonio Pavanello, FEI
Invited Paper 1
13:20-14:00
CMOS-Compatible Spintronic Devices
Viktor Sverdlov, Joydeep Ghosh, Alexander Makarov, Thomas Windbacher, and Siegfried Selberherr
Session 2 - Device Physics and Modeling - Room: Fernando Pessoa 1
Chair: Gilson Inácio Wirth, UFRGS
14:00-14:20 Modelling of dark current in AlGaAs/GaAs QWIPs
Diogo de Moura Pedroso and Angelo Passaro
14:20-14:40 Impact of Temperature on Electromigration Lifetime Extrapolation
Roberto Lacerda de Orio
14:40-15:00 Limitations of Coupled Mode Theory to Model Coupled Microresonators “Dark States”
Guilherme de Rezende, Mario Souza and Newton Frateschi
15:00-15:20 Numerical Evaluation of Warpage in PoP Encapsulated Semiconductors
Fabiano Alex Colling, Celso Renato Peter, Carlos Alberto Mendez Moraes, Eduardo Luiz Rhod, Willyan Hasenkamp Carreira, Dong-Hyun Park and Tae Sung Oh
15:20-15:40 Coffe-Break & Exhibitors
Session 3 - Fabrication Technology - Room: Fernando Pessoa 1
Chair: José Alexandre Diniz, Unicamp
15:40-16:00 Spacer lithography for 3D MOS devices using amorphous silicon deposited by ECR- CVD
Andressa Rosa, José Diniz, Ioshiaki Doi, Mara Canesqui, Alfredo Vaz and Marcos dos Santos
16:00-16:20 Development of MCM-D Technology With Photosensitive Benzocyclobutene
Cristina Adamo, Alexander Flacker, Hercílio Cavalcanti, Ricardo Teixeira, Antônio Rotondaro and Leandro Manera
16:20-16:40 Characterization of HfO2 on Hafnium-Indium-Zinc Oxide HIZO layer Metal-Insulator- Semiconductor Structures deposited by RF sputtering
Isai Hernandez, Magali Estrada, Ivan Garduño, Julio Tinoco and Antonio Cerdeira
16:40-17:00 Investigations of Capacitively-Coupled Plasmas by Electrostatic Probe Technique
Giuseppe Cirino, Raul Castro, Marcelo Pisani, Patrick Verdonck, Ronaldo Mansano, Marcos Massi, Rodrigo Pessoa, Luis Alberto Barea, Tayeb Brahim and Homero Maciel
17:00-17:20 Reactive Sputtering of SixNy for MONOS Memory Fabrication
Matheus Adam, Artur Coelho, Marcelo Pereira and Henri Boudinov
17:20-17:40 From InAs extended monolayer flat 2D terraces to 3D islands grown on GaAs substrates
Guilherme Torelly, Roberto Jakomin, Mauricio P. Pires, Luciana P. Dornelas, Rodrigo Prioli, Paula G. Caldas, Hongen Xie, Fernando A. Ponce and Patricia L. Souza
Thursday, September 3rd
Keynotes - Room: Fernando Pessoa 1 & 2
Keynote 2
08:40-09:40
Majority-based synthesis for digital nano-technologies
Giovanni De Micheli
EPFL, Switzerland
Session 4 - Devices and Circuits - Room: Fernando Pessoa 1
Chair: Salvador Gimenez, FEI
10:00-10:20 Use of Back Gate Bias to Enhance the Analog Performance of Planar FD and UTBB
SOI Transistors-Based Self-Cascode Structures

Rodrigo Doria, Denis Flandre, Renan Trevisoli, Michelly de Souza and Marcelo Pavanello
10:20-10:40 Effect of Channel Doping Concentration on the Harmonic Distortion of Asymmetric
n- and p-type Self-Cascode MOSFETs

Lígia d'Oliveira, Rodrigo Doria, Marcelo Pavanello, Denis Flandre and Michelly de Souza
10:40-11:00 Performance Comparison Between TFET and FinFET Differential Pair
Marcio Martino, João Martino and Paula Agopian
11:00-11:20 Design and comparative performance simulation of RHBD inverter cells in 180nm CMOS
Pablo Vaz and Gilson Wirth
11:20-11:40 Comparative Analysis of 350nm CMOS Active Pixel Sensor Electronics
Lidiane Costa, Artur Mello, Luciana Salles and Davies William Monteiro
11:40-12:00 Wireless transducer based on split-ring resonator
Roddy Alexander Romero, Renato Feitoza, Carlos Renato Rambo and Fernando Rangel De Sousa
12:00-13:20 Lunch
Invited Papers - Room: Fernando Pessoa 1
Chair: Marcelo Antonio Pavanello, FEI
Invited Paper 2
13:20-14:00
The smaller the noisier? Low Frequency Noise Diagnostic of Advanced Semiconductor Devices
C. Claeys, E. Simoen, P.G.D. Agopian, J.A. Martino, M. Aoulaiche, B. Cretu, W. Fang, R. Rooyackers, A. Vandooren, A. Veloso, M. Jurczak, N. Collaert and A. Thean
Flash Presentation and Poster Session - Room: Fernando Pessoa 1 & Foyer S1
Chair: Marcelo Antonio Pavanello, FEI
14:00-15:40
Electrical and Optical Behavior of ZnO Nanowires Irradiated by High-energy Ions
C. I. L. Sombrio, A. L. F. Cauduro, P. L. Franzen, H. I. Boudinov and D. L. Baptista
Fabrication of 60 Channel Microelectrode Arrays for Future Use With Cultured Neuronal Networks
Vanessa Gomes, Angelica Barros, João Filho, Sergio Martinoia, Alberto Pasquarelli and Jacobus Swart
Role of the extensions in Double-Gate Junctionless MOSFETs in the drain current at high gate voltage
Antonio Cerdeira, Fernando Ávila, Bruna Cardoso, Magali Estrada and Marcelo Pavanello
Photoactive Thin Films Based on Benzoxazole Derivatives
Louise Etcheverry, Fabiano Rodembusch, Henri Boudinov, André Gündel and Eduardo Moreira
Fatigue Analysis of IC Packaging
Vanessa Davanço Pereira de Lima and Antônio Luis Pacheco Rotondaro
Effect of Metal Target Power on the Properties of Co-Sputtered Sn-DLC and W-DLC Thin Films
Gabriela Leal, Mariana A. Fraga, Guilherme W. A. Cardoso, Argemiro S. da Silva Sobrinho and Marcos Massi
Production of Yb3+/Er3+ codoped PbO-GeO2 pedestal type waveguides for photonic applications
Francisco Bomfim, Davinson da SIlva, Vanessa Del Cacho, Luciana Kassab and Marco Alayo
On the Origin of Low-Frequency Noise of Submicron Graded-Channel Fully Depleted SOI nMOSFETs
Allan Molto, Rodrigo Doria, Michelly Souza and Marcelo Pavanello
Ground Plane Influence on UTBB SOI nMOSFET Analog Parameters
Vitor Itocazu, Victor Sonnenberg, Eddy Simoen, Cor Claeys and Joao Antonio Martino
Array of Miniaturized Structures Applied to Small-Labs Development
Alisson R. Leite, Roberto R. Lima, Eliphas W.Simões and Maria Lúcia P. da Silva
Carbon dioxide sensing at near infrared using zeolitic imidazolate framework-8 (ZIF- 8) absorbers
Ademauro Volponi and Sebastião Gomes dos Santos Filho
Imaging amplification for minimally invasive medical devices
Jose Correia, Jose Gomes, Catarina Costa, Reinoud Wolffenbuttel, Joao Carmo
15:20-15:40 Coffe-Break & Exhibitors
Session 5 - Sensors - Room: Fernando Pessoa 1
Chair: Jacobus Swart, Unicamp
15:40-16:00 Novel SAW Gas sensor based on Graphene
Ioannis NIKOLAOU, Hamida Hallil, George Deligeorgis, Veronique Conedera, Hermenegildo Garcia, Corinne Dejous and Dominique Rebière
16:00-16:20 Porous silicon photonic crystal applied as chemosensor for organic solvents
Danilo Huanca and Walter Salcedo
16:20-16:40 Design of an interdigitated microelectrode biosensor using a-SiC:H surface to capture E. coli
José Herrera-Celis, Claudia Reyes-Betanzo and Abdu Orduña-Díaz
16:40-17:00 Adaptation of the Pedagogical Approaches for master students in Microelectronics in the Frame of a French-Chinese Joint Program
Olivier Bonnaud and Xuefei Zhong
PANEL
17:20-19:00
Challenges for Semiconductor in Brazil and 10 years of the program IC Brazil
Room: Fernando Pessoa 1 & 2
Moderator: Jacobus W. Swart
19:20-21:00 Conference Dinner
Friday, September 4th
Keynotes - Room: Fernando Pessoa 1 & 2
Keynote 3
08:40-09:40
A Path towards Average-Case Silicon via Asynchronous Resilient Bundled-Data Design
Peter Beerel
University of Southern California (USC) in Los Angeles
09:40-10:00 Coffe-Break & Exhibitors
Session 6 - Nanowires and TFETs - Room: Fernando Pessoa 1
Chair: João Antonio Martino, USP
10:00-10:20 Effective Channel Length in Junctionless Nanowire Transistors
Renan Trevisoli, Rodrigo Doria, Michelly de Souza and Marcelo Pavanello
10:20-10:40 Detailed Analysis of Transport Properties of FinFETs Through Y-Function Method: Effects of Substrate Orientation and Strain
Thales Augusto Ribeiro, Eddy Simoen, Cor Claeys, João Antonio Martino and Marcelo Antonio Pavanello
10:40-11:00 Impact of Diameter on TFET Conduction Mechanisms
Victor B. Sivieri, Paula G. D. Agopian and João A. Martino
11:00-11:20 Analytical Compact Model for Triple Gate Junctionless MOSFETs
Fernando Ávila-Herrera, Antonio Cerdeira, Bruna Cardoso Paz, Magali Estrada and Marcelo Antonio Pavanello
11:20-11:40 Analysis of analog parameters in NW-TFETs with Si and SiGe source composition at high temperatures
Caio Bordallo, João Martino, Paula Agopian, Rita Rooyackers, Anne Vandooren, Aaron Thean, Eddy Simoen and Cor Claeys
11:40-12:00 Electrical characterization of electrodeposited Ni nanowires for MagFET application
Marcos Vinicius Puydinger dos Santos, Lucas Petersen Barbosa Lima, Rafael Alves Mayer, Jefferson Bettini, Fanny Béron, Kleber Roberto Pirota and José Alexandre Diniz
12:00-13:20 Lunch
Invited Papers - Room: Fernando Pessoa 1
Chair: Marcelo Antonio Pavanello, FEI
Invited Paper 3
13:20-14:00
More Moore and More Than Moore meeting for 3D
Simon Deleonibus
Session 7 - Photonics - Room: Fernando Pessoa 1
Chair: Henri Boudinov, UFRGS
14:00-14:20 All-Optical Majority and Feynman Gates in Photonic Crystals
Luis Eduardo Pedraza Caballero, Juan Pablo Vasco Cano, Paulo Sérgio Soares Guimarães and Omar Paranaiba Vilela Neto
14:20-14:40 Engineering of the photoluminescence of ZnO nanowires by different growth and annealing environments
A. L. F. Cauduro, C. I. L. Sombrio, P. L. Franzen, H. I. Boudinov and D. L. Baptista
14:40-15:00 Photo and Electroluminescence from SiNx Layers Deposited by Reactive Sputtering
Guilherme Sombrio, Frâncio Rodrigues, Paulo Franzen, Paulo Soave and Henri Boudinov
15:00-15:20 InAs quantum dots on GaAs for intermediate band solar cells
Daniel Micha, Eleonora Weiner, Roberto Jakomin, Rudy Kawabata, Renato Mourão, Mauricio Pires and Patricia Souza
15:20-15:40 New hybrid structures based on CdSe/ZnS quantum dots and multilayer graphene for photonics applications
Andrei Alaferdov, Raluca Savu, Simas Rackauskas, Tatiana Rackauskas, Mara Canesqui, Yulia Gromova, Anna Orlova, Alexander Baranov, Analoty Fedorov and Stanislav Moshkalev
15:40-16:00 Fresnel Zone Plate Array Fabricated by Maskless Lithography
Luís Alberto Barêa, Antonio A. von Zuben, Tayeb Mohammed-Brahim, Arlindo Neto Montagnoli, Michel Hospital, Newton Cesário Frateschi and Giuseppe Antonio Cirino
Best Papers Awards - Room: Fernando Pessoa 1 & 2 - 16:00 - 16:20
Closing Ceremony - - Room: Fernando Pessoa 1 & 2 - 16:20 - 16:40

 

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